Search results for “Interstitial defect” companies
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Key Players
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Innovation Intensity
With the analysis among 73 patents, we discovered top 24 key players by total patent application. MEMC ELECTRONIC MATERIALS, INC., Synopsys, Inc., SemEquip, Inc. are dominant in this area. They take 47.95% of the total patent filing.
United States
Patent: 14
California, United States
Patent: 12
Massachusetts, United States
Patent: 9
France
Patent: 4
Taiwan Province, China
Patent: 4
France
Patent: 4
Tokyo-to, Japan
Patent: 3
South Korea
Patent: 3
Massachusetts, United States
Patent: 3
France
Patent: 2
Startups & Unicorns
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Innovation Intensity
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Fast-Growing
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Innovation in recent 5 years
With the analysis among related 6 patents applied in the last 5 years. We discover 7 most active companies in this area. The fast-growing Xi'an Yisiwei Silicon Wafer Technology Co., Ltd., Offshore Oil Engineering Co., Ltd., Zhonghuan Leading Semiconductor Materials Co., Ltd. take 50.00% of patent filing during this period.
Shaanxi Sheng, China
Patent: 1
Tianjin Shi, China
Patent: 1
Jiangsu Sheng, China
Patent: 1
Shaanxi Sheng, China
Patent: 1
São Paulo, Brazil
Patent: 1
Jiangsu Sheng, China
Patent: 1
Beijing Maizhuji Technology Co., Ltd.
Beijing Shi, China
Patent: 1
New Entrants
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Innovation in recent 5 years
With the analysis among related 6 patents in last 5 years, we discover 7 new entrants. Xi'an Yisiwei Silicon Wafer Technology Co., Ltd., Offshore Oil Engineering Co., Ltd., Zhonghuan Leading Semiconductor Materials Co., Ltd. are the most active new entrants in this area.
Shaanxi Sheng, China
Patent: 1
Tianjin Shi, China
Patent: 1
Jiangsu Sheng, China
Patent: 1
Shaanxi Sheng, China
Patent: 1
São Paulo, Brazil
Patent: 1
Jiangsu Sheng, China
Patent: 1
Beijing Maizhuji Technology Co., Ltd.
Beijing Shi, China
Patent: 1
Research Institutions
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Innovation Intensity
With the analysis among 3 patents, we discovered top 3 universities and scientific research institutions by total patent application.
São Paulo, Brazil
Patent: 1
Gansu Sheng, China
Patent: 1
Heilongjiang Sheng, China
Patent: 1
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